GMF71020 fast recovery diode module voltage up to 0 v average current 200 a surge current 5 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage v rsm non-repetitive peak reverse voltage 100 v i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 40 ma forward characteristics i f(av) average forward current sine wave,180 conduction, tc = 85c 200 a i f(rms) r.m.s. forward current sine wave,180 conduction, tc = 85c 375 a i fsm surge forward current non rep. half sine wave, 50 hz, v r = 0 v, t j = 25 c 5ka i2t i2 t for fusing coordination 125 ka2s v fm peak forward voltage, max forward current i f = 800 a, tj = 25 c 1.5 v switching characteristics q rr rverse recovery charge, typ t j = 25c, i f = 800 a, di/dt = -25 a/s 100 c i rr reverse recovery current v r = 30 v 130 a t rr reverse recovery time 1.5 s thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) 0.16 c/w r th(c-h) thermal resistance (case to heatsink) 0.03 c/w t jmax max operating junction temperature 150 c t stg storage temperature -40 / 150 c m mounting torque - bus bar +/- 10% 10 nm m mounting torque - heatsink +/- 10% 6 nm mass 100 g document GMF71020t002 value 400-800 v gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 8800 fax: +39-010-667 8812 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors dimensions mm [inch]
|
